Detection of mutant p53 using field-effect transistor biosensor

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Title
Detection of mutant p53 using field-effect transistor biosensor
Author(s)
S H Han; S K Kim; Kyoung Sook Park; So Yeon Yi; H J Park; H K Lyu; Moonil Kim; Bong Hyun Chung
Bibliographic Citation
Analytica Chimica Acta, vol. 665, no. 1, pp. 79-83
Publication Year
2010
Abstract
We assessed the abilities of wild p53 and mutant p53 proteins to interact with the consensus DNA-binding sequence using a MOSFET biosensor. This is the first report in which mutant p53 has been detected on the basis of DNA-protein interaction using a FET-type biosensor. In an effort to evaluate the performance of this protocol, we constructed the core domain of wild p53 and mutant p53 (R248W), which is DNA-binding-defective. After the immobilization of the cognate DNA to the sensing layer, wild p53 and mutant p53 were applied to the DNA-coated gate surface, and subsequently analyzed using a semiconductor analyzer. As a consequence, a significant up-shift in drain current was noted in response to wild p53, but not mutant p53, thereby indicating that sequence-specific DNA-protein interactions could be successfully monitored using a field-effect-based biosensor. These data also corresponded to the results obtained using surface plasmon resonance (SPR) measurements. Taken together, our results show that a FET-type biosensor might be promising for the monitoring of mutant p53 on the basis of its DNA-binding activity, providing us with very valuable insights into the monitoring for diseases, particularly those associated with DNA-protein binding events.
Keyword
BiosensorDNA-binding domainMetal oxide semiconductor field-effect transistorMutant p53P53
ISSN
0003-2670
Publisher
Elsevier
DOI
http://dx.doi.org/10.1016/j.aca.2010.03.006
Type
Article
Appears in Collections:
Division of Biomaterials Research > Bionanotechnology Research Center > 1. Journal Articles
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